High frequency IGBT of 650V of meaning law semiconductor uses technology of switch of newest high speed to promote application property

China, the series of HB2 650V IGBT of semiconductor of —— meaning law used field of newest bar of the 3rd acting channel to end on April 30, 2019 (TFS) technology, can raise PFC converter, electric welder, UPS (application of the high speed in waiting designs inverter of UPS) , solar energy can effect and function. This series still includes to accord with AEC-Q101 Rev. The car form product of D standard.

High frequency IGBT of 650V of meaning law semiconductor uses technology of switch of newest high speed to promote application property

New HB2 series belongs to STPOWER™ product familial, lower (the VCEsat saturated voltage of 1.55V) ensures guide the grid charge with epicene extremely can outstanding smaller; makes its can issue sudden switch in condition of low grid electric current, raise the hot performance with excellent; of dynamic switch function to conduce to utmost ground increasing dependability and power density, with the highly competitive product on stylish series or market.

HB2 series IGBT offers option of 3 in-house diode: Completely rated diode, half rated diode or prevent to slant reversely accidentally the protective diode of buy, offer more freedom to design authority for developer thereby, according to specific applying demand optimizes dynamic function.

The first product 40A STGWA40HP65FB2 of new 650V parts of an apparatus already appeared on the market now, use TO-247 to grow bring a foot to enclose.

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